Asynchronous/synchronous interface

ABSTRACT

The present disclosure includes methods, and circuits, for operating a memory device. One method embodiment for operating a memory device includes controlling data transfer through a memory interface in an asynchronous mode by writing data to the memory device at least partially in response to a write enable signal on a first interface contact, and reading data from the memory device at least partially in response to a read enable signal on a second interface contact. The method further includes controlling data transfer in a synchronous mode by transferring data at least partially in response to a clock signal on the first interface contact, and providing a bidirectional data strobe signal on an interface contact not utilized in the asynchronous mode.

PRIORITY INFORMATION

This application is a Continuation of U.S. application Ser. No.16/110,294, filed Aug. 23, 2018, which issues as U.S. Pat. No.10,460,775 on Oct. 29, 2019, which is a Continuation of U.S. applicationSer. No. 15/674,586, filed Aug. 11, 2017, now U.S. Pat. No. 10,083,725,which is a Continuation of U.S. application Ser. No. 14/938,183, filedNov. 11, 2015, now U.S. Pat. No. 9,754,643, which is a Continuation ofU.S. application Ser. No. 14/063,773 filed Oct. 25, 2013, now U.S. Pat.No. 9,190,153, which is a Divisional of U.S. application Ser. No.13/590,849 filed Aug. 21, 2012, now U.S. Pat. No. 8,593,889, which is aDivisional of U.S. application Ser. No. 13/078,563 filed Apr. 1, 2011,now U.S. Pat. No. 8,248,868, which is a Divisional of Ser. No.12/131,152 filed Jun. 2, 2008, now U.S. Pat. No. 7,920,431, thespecification of which are incorporated herein by reference.

TECHNICAL FIELD

The invention relates to semiconductors and semiconductor memorydevices. More particularly, in one or more embodiments the inventionrelates to a communication interface for a memory device.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits in computers or other electronic devices. There aremany different types of memory including random-access memory (RAM),read only memory (ROM), dynamic random access memory (DRAM), synchronousdynamic random access memory (SDRAM), and flash memory, among others.

Flash memory devices are utilized as non-volatile memory for a widerange of electronic applications. Flash memory devices typically use aone-transistor memory cell that allows for high memory densities, highreliability, and low power consumption.

Uses for flash memory include memory for personal computers, personaldigital assistants (PDAs), digital cameras, and cellular telephones,among others. Program code and system data, such as a basic input/outputsystem (BIOS), are typically stored in flash memory devices. Thisinformation can be used in personal computer systems, and otherelectronic devices.

Two common types of flash memory array architectures are the “NAND” and“NOR” architectures, so called for the logical form in which the basicmemory cell configuration of each is arranged.

A NAND array architecture arranges its array of floating gate memorycells in a matrix such that the gates of each floating gate memory cellin a “row” of the array are coupled to an access line (which is commonlyreferred to in the art as a “word line” or “select line”). However eachmemory cell is not directly coupled to a column data line (which iscommonly referred to in the art as a “bit line” or “sense line”) by itsdrain. Instead, the memory cells of the array are coupled together inseries, source to drain, between a source line and a column sense line.

Memory cells in a NAND array architecture can be programmed to a desiredstate. That is, electric charge can be placed on or removed from thefloating gate of a memory cell to put the cell into a number of storedstates. For example, a single level cell (SLC) can represent two states,e.g., 1 or 0. Flash memory cells can also be programmed to more than twostates, such as to a number of states that allows a cell to representmore than two binary digits, e.g., 1111, 0111, 0011, 1011, 1001, 0001,0101, 1101, 1100, 0100, 0000, 1000, 1010, 0010, 0110, and 1110. Suchcells may be referred to as multi state memory cells, multidigit cells,or multilevel cells (MLCs). MLCs can allow the manufacture of higherdensity memories without increasing the number of memory cells sinceeach cell can represent more than one binary digit, e.g., more than onebit. MLCs can have more than two programmed states, e.g., a cell capableof representing four digits can have sixteen programmed states. For someMLCs, one of the sixteen programmed states can be an erased state. Forthese MLCs, the lowermost program state is not programmed above theerased state, that is, if the cell is programmed to the lowermost state,it remains in the erased state rather than having a charge applied tothe cell during a programming operation. The other fifteen states can bereferred to as “non-erased” states.

Flash memory devices can be programmed with various amounts of data atone time. The amount of data programmable at one time can be referred toas a page of data. In some memory devices, one page of data includesdata stored on memory cells coupled to a given select line. In othermemory devices, data stored on a select line can be divided into morethan one page, e.g., into an even page and odd page of data. In someinstances, a page of data may include data stored in memory cells onmore than one select line. Various amounts of data can also be erasedfrom a flash device at the same time. The amount of data erasable at onetime can be referred to as a block of data. A block of data can includea number of data pages. A memory plane can include a number of datablocks on a given die. Some memory devices have multiple planes per die.For example, a die could include a plane of even numbered blocks and aplane of odd numbered blocks.

During a programming operation, data can be loaded into cache registersfor each memory plane before being programmed to each plane. Forexample, a page of data may be loaded into a register, then programmedto a plane, after which another page of data may be loaded into theregister. This process can repeat until the programming operationcompletes. During a sensing operation, data can be loaded from one ormore memory planes into cache registers.

Currently, the de facto standard interface for NAND flash memoryutilized by major NAND flash memory manufacturers is an asynchronousinterface. The asynchronous interface has supported several generationsof scaling of the input/output (I/O) data rates. However, the scalinglimit of the asynchronous interface is fast approaching, and a memoryaccess device will have difficulty in cleanly capturing data from thememory, e.g., NAND Flash, device at higher access speeds.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic of a portion of a non-volatile memory array, inaccordance with one or more embodiments of the present disclosure.

FIG. 2 is a functional block diagram of a computer system having atleast one memory device operated in accordance with one or moreembodiments of the present disclosure.

FIG. 3 is a functional block diagram of an electronic memory systemhaving at least one memory device operated in accordance with one ormore embodiments of the present disclosure.

FIG. 4 is a functional block diagram of a memory device, in accordancewith one or more embodiments of the present disclosure.

FIG. 5 shows I/O pin assignments of a memory interface for asynchronous,and synchronous, operating modes respectively, in accordance with one ormore embodiments of the present disclosure.

FIG. 6A shows timing waveforms associated with an asynchronous interfacebefore switching to a synchronous interface, in accordance with one ormore embodiments of the present disclosure.

FIG. 6B shows timing waveforms associated with a synchronous interfaceafter switching from an asynchronous interface, in accordance with oneor more embodiments of the present disclosure.

FIG. 6C shows timing waveforms associated with a synchronous interfacebefore switching to an asynchronous interface, in accordance with one ormore embodiments of the present disclosure.

FIG. 6D shows timing waveforms associated with an asynchronous interfaceafter switching from a synchronous interface, in accordance with one ormore embodiments of the present disclosure.

FIG. 7 is a circuit diagram of a memory interface circuit, in accordancewith one or more embodiments of the present disclosure.

FIG. 8 is a functional block diagram of a memory module having at leastone memory device, in accordance with one or more embodiments of thepresent disclosure.

DETAILED DESCRIPTION

The present disclosure includes methods, and circuits, for operating amemory device. One method embodiment includes controlling data transferthrough a memory interface in an asynchronous mode by writing data tothe memory device at least partially in response to a write enablesignal on a first interface contact, and reading data from the memorydevice at least partially in response to a read enable signal on asecond interface contact. The method further includes controlling datatransfer in an synchronous mode by transferring data at least partiallyin response to a clock signal on the first interface contact, andproviding a bidirectional data strobe signal on an interface contact notutilized in the asynchronous mode.

In the following detailed description of the present disclosure,reference is made to the accompanying drawings that form a part hereof,and in which is shown by way of illustration how one or more embodimentsof the disclosure may be practiced. These embodiments are described insufficient detail to enable those of ordinary skill in the art topractice the embodiments of this disclosure, and it is to be understoodthat other embodiments may be utilized and that process, electrical,and/or structural changes may be made without departing from the scopeof the present disclosure.

Asynchronous memory devices, e.g., DRAMs built with an asynchronousRAS/CAS interface have difficulty meeting the high memory bandwidthdemands of many current computer systems. As a result, synchronousinterface standards have been proposed. These alternative interfacestandards include synchronous DRAM (SDRAM). In contrast to aasynchronous interface for DRAM, SDRAM systems use a clock tosynchronize the communication between the memory access device and theSDRAM. Timing communication with a clock allows data to be placed on theSDRAM output with more precise timing. In addition, the clock signal canbe used for internal pipelining. These characteristics of synchronouscommunication results in higher possible transfer rates.

FIG. 1 is a schematic of a portion of a non-volatile memory array 100.The embodiment of FIG. 1 illustrates a NAND architecture non-volatilememory. However, embodiments described herein are not limited to thisexample. As shown in FIG. 1, the memory array 100 includes select lines105-1, . . . , 105-N and intersecting sense lines 107-1, . . . , 107-M.For ease of addressing in the digital environment, the number of selectlines 105-1, . . . , 105-N and the number of sense lines 107-1, . . . ,107-M are typically each some power of two, e.g., 256 select lines by4,096 sense lines.

Memory array 100 includes NAND strings 109-1, . . . , 109-M. Each NANDstring includes non-volatile memory cells 111-1, . . . , 111-N, eachlocated at an intersection of a select line, e.g., 105-1, . . . , 105-N,and a local sense line, e.g., 107-1, . . . , 107-M. The non-volatilememory cells 111-1, . . . 111-N of each NAND string 109-1, . . . , 109-Mare connected in series source to drain between a source select gate(SGS), e.g., a field-effect transistor (FET) 113, and a drain selectgate (SGD), e.g., FET 119. Source select gate 113 is located at theintersection of a local sense line 107-1 and a source select line 117.The drain select gate 119 is located at the intersection of the localsense line 107-1 and a drain select line 115.

As shown in the embodiment illustrated in FIG. 1, a source of sourceselect gate 113 is connected to a common source line 123. The drain ofsource select gate 113 is connected to the source of the memory cell111-1 of the corresponding NAND string 109-1. The drain of drain selectgate 119 is connected to the local sense line 107-1 for thecorresponding NAND string 109-1 at drain contact 121-1. The source ofdrain select gate 119 is connected to the drain of the last memory cell111-N, e.g., a floating-gate transistor, of the corresponding NANDstring 109-1.

In one or more embodiments, construction of non-volatile memory cells,111-1, . . . , 111-N, includes a source, a drain, a floating gate orother charge storage node, and a control gate. Non-volatile memorycells, 111-1, . . . , 111-N, have their control gates coupled to aselect line, 105-1, . . . , 105-N respectively. A column of thenon-volatile memory cells, 111-1, . . . , 111-N, make up the NANDstrings, e.g., 109-1, . . . , 109-M, those memory cells being commonlycoupled to a given local sense line, e.g., 107-1, . . . , 107-Mrespectively. A row of the non-volatile memory cells are those memorycells commonly coupled to a given select line, e.g., 105-1, . . . ,105-N. A NOR array architecture would be similarly laid out except thatthe string of memory cells would be coupled in parallel between theselect gates.

As one of ordinary skill in the art will appreciate, subsets of cellscoupled to a selected select line, e.g., 105-1, . . . , 105-N, can beprogrammed and/or sensed together as a group. A programming operation,e.g., a write operation, can include applying a number of programpulses, e.g., 16V-20V, to a selected select line in order to increasethe threshold voltage (Vt) of selected cells to a desired programvoltage level corresponding to a desired program state.

A sensing operation, such as a read or program verify operation, caninclude sensing a voltage and/or current change of a sense line coupledto a selected cell in order to determine the state of the selected cell.The sensing operation can involve biasing a sense line, e.g., sense line107-1, associated with a selected memory cell at a voltage above a biasvoltage for a source line, e.g., source line 123, associated with theselected memory cell. A sensing operation could alternatively includeprecharging the sense line 107-1 followed with discharge when a selectedcell begins to conduct, and sensing the discharge.

Sensing the state of a selected cell can include applying a sensingvoltage to a selected select line, while biasing the unselected cells ofthe string at a voltage sufficient to place the unselected cells in aconducting state independent of the threshold voltage of the unselectedcells. The sense line corresponding to the selected cell being readand/or verified can be sensed to determine whether or not the selectedcell conducts in response to the particular sensing voltage applied tothe selected select line. For example, the state of a selected cell canbe determined by the select line voltage at which the sense line currentreaches a predetermined reference current associated with a particularstate.

As one of ordinary skill in the art will appreciate, in a sensingoperation performed on a selected memory cell in a NAND string, theunselected memory cells of the string are biased so as to be in aconducting state. In such a sensing operation, the data stored in theselected cell can be based on the current and/or voltage sensed on thebit line corresponding to the string. For instance, the interpretedvalue of data stored in the selected cell can be based on whether thebit line current changes by a predetermined amount or reaches apredetermined level in a given time period.

When the selected cell is in a conductive state, current flows between asource line contact at one end of the string, and a bit line contact atthe other end of the string. As such, the current associated withsensing the selected cell is carried through each of the other cells inthe string, the diffused regions between cell stacks, and the selecttransistors.

FIG. 2 is a functional block diagram of a computer system having atleast one memory device operated in accordance with one or moreembodiments of the present disclosure. FIG. 2 illustrates a computersystem 200 including computer circuitry 202 that contains the memory204. The computer circuitry 202 performs various computing functions,such as executing specific software to perform specific calculations ortasks. In addition, the computer system 200 may include one or moreinput devices 206, such as a keyboard and/or pointing device, coupled tothe computer circuitry 202 to allow an operator to interface with thecomputer system 200. Typically, the computer system 200 also includesone or more output devices 208 coupled to the computer circuitry 202,such output devices typically being, for example, a display and/orprinting device.

One or more data storage devices 210 are also typically coupled to thecomputer circuitry 202 to store data or retrieve data. Examples ofstorage devices 210 include hard disks and non-volatile memory. Thecomputer system 200 may also include a communication link 212 throughwhich the computer circuitry 202 can send and receive data, such as to anetwork 214. For example, the communication link 212 may be a wirelesscommunication link configured to communicate with the network 214through a wireless medium. The computer circuitry 202 is typicallycoupled to the memory 204 through an appropriate interface 216, theinterface 216 including address, data, and control busses to provide forwriting data to, and reading data from, the memory 204.

FIG. 3 is a functional block diagram of an electronic memory system 301having at least one memory device 303 operated in accordance with one ormore embodiments of the present disclosure. Memory system 301 includes aprocessor 305 coupled to a non-volatile memory device 303 that includesa memory array 304 of non-volatile memory cells. The memory system 301can include separate integrated circuits or both the processor 305 andthe memory device 303 can be on the same integrated circuit. Theprocessor 305 can be a microprocessor or some other type of controllingcircuitry such as an application-specific integrated circuit (ASIC).

The memory device 303 includes an array of non-volatile memory cells304, which can be floating gate flash memory cells with a NANDarchitecture, for example. The control gates of memory cells of a “row”are coupled with a select line, while the drain regions of the memorycells of a “column” are coupled to sense lines. The source regions ofthe memory cells are coupled to source lines, as the same has beenillustrated in FIG. 1. As will be appreciated by those of ordinary skillin the art, the manner of connection of the memory cells to the senselines and source lines depends on whether the array is a NANDarchitecture, a NOR architecture, an AND architecture, or some othermemory array architecture.

The embodiment of FIG. 3 includes address circuitry 343 to latch addresssignals provided over I/O connections 327 through I/O control circuitry318. Address signals are received and decoded by a row decoder 352 and acolumn decoder 350 to access the memory array 304. In light of thepresent disclosure, it will be appreciated by those skilled in the artthat the number of address input connections depends on the density andarchitecture of the memory array 304 and that the number of addressesincreases with both increased numbers of memory cells and increasednumbers of memory blocks and arrays.

The memory device 303 senses data in the memory array 304 by sensingvoltage and/or current changes in the memory array columns usingsense/buffer circuitry that in this embodiment can be read/latchcircuitry 353. The read/latch circuitry 353 can read and latch a page,e.g., a row, of data from the memory array 304. I/O control circuitry318 is included for bi-directional data communication over the I/Oconnections 327 with the processor 305. Write circuitry 355 is includedto write data to the memory array 304.

Control logic circuitry 320 decodes signals provided by controlconnections 329 from the processor 305. These signals can include chipsignals, write enable signals, and address latch signals (among others)that are used to control the operations on the memory array 304,including data sensing, data write, and data erase operations. Thecontrol logic circuitry 320 can send signals, e.g., commands, toselectively reset particular registers and/or sections of registersaccording to one or more embodiments of the present disclosure. In oneor more embodiments, the control logic circuitry 320 is responsible forexecuting instructions from the processor 305 to perform the operationsaccording to embodiments of the present disclosure. The control logiccircuitry 320 can be a state machine, a sequencer, or some other type ofcontroller. It will be appreciated by those skilled in the art thatadditional circuitry and control signals can be provided, and that thememory device detail of FIG. 3 has been reduced to facilitate ease ofillustration.

FIG. 4 is a functional block diagram of a memory device in accordancewith one or more embodiments of the present disclosure. FIG. 4illustrates a memory device 403, including a memory interface 416 andmemory 404. While memory 404 is shown being a NAND Flash array arrangedto have 4 planes, embodiments of the present invention are not solimited, and may include other types of memory, as well different memoryarrangements, e.g., more or fewer planes, etc.

According to one or more embodiments of a memory device, e.g., memorydevice 403, a NAND flash memory device does not include dedicatedaddress contacts, e.g., pins, pads, signal lines, etc. Data, commands,and addresses are all multiplexed onto the same pins, e.g., 426, andreceived by I/O control circuits 418, providing the memory device with areduced pin count. Commands are latched by a command register 424 andare transferred to control logic circuits for generating internalsignals to control memory device operations.

Addresses are latched by an address register 444 and sent to a rowdecoder 452 to select a row address, or to a column decoder 450 toselect a column address. The data are transferred to or from the NANDflash memory array 404, byte by byte, through a data register 456 andcache register 454. The cache register 454 is closest to I/O controlcircuits 418, and acts as a data buffer for the I/O data. The dataregister 456 is closest to the memory array 404, and acts as a databuffer for the memory array 404.

The memory interface 416 includes an I/O control 418 and control logic420. Control logic 420 receives memory commands, e.g., through signallines and/or a command bus. For example, control logic 420 receives aSYNC signal 422 which may be a particular status bit, e.g., flag, set ina command register 424.

I/O control 418 generates internal control signals within the memorydevice 403 to carry out various memory operations. The control signalsmay be coded digital values, e.g., binary and/or hexadecimal codes, etc.For example, a register bit may be set, or cleared, e.g., as a flag, toindicate status of a control signal, or a hexadecimal code may becommunicated over an I/O path to indicate a particular command of aninstruction set.

Row and column addresses are provided by the address register, e.g.,buffer, 444 for decoding by a row address decoder 452 and a columnaddress decoder 450, respectively. Memory array I/O circuitry 418 iscoupled to the memory array, e.g., 404, via an I/O data bus. Write dataare applied to the memory array 404 through a data input buffer, e.g.,cache register 454, and the memory array read/write circuitry, e.g.,data register 456.

The control logic 420 responds to memory commands applied through thecommand register 424 to perform various operations on the memory array404. In particular, the command register 424 is used to generateinternal control signals to read data from and write data to the memoryarray 404. The data read from the memory array 404 are transferred tothe output buffer, e.g., data register 456, and provided on the data I/Olines. In a write operation, the addressed memory cell is accessed anddata provided on the data I/O lines to the data input buffer, e.g., dataregister 456 (through the cache register 454), to be stored in thememory array 404.

According to one or more embodiments of the present disclosure, memory404 is a high speed NAND Flash device, and memory interface 416 can beoperated in a synchronous mode for high-performance I/O operations, orin an asynchronous mode for legacy NAND Flash operations. Memoryinterface 416 uses a highly multiplexed 8-bit bus 426 (DQ[7:0]) totransfer commands, addresses, and data. Data transfers in thesynchronous mode include a bidirectional data strobe (DQS) 428.

According to one or more embodiments, between the synchronous andasynchronous modes, a number signals are used to implement a NAND Flashprotocol. In the asynchronous mode, these signals include a chip enable(CE #) signal on a CE # signal line 430, command latch enable (CLE)signal on a CLE signal line 432, address latch enable (ALE) signal on aALE signal line 434, write enable (WE #) signal on a WE # signal line436, and read enable (RE #) signal on a RE # signal line 438. Additionalsignals control hardware write protection, e.g., the write protection(WP #) signal on the WP # signal line 440, and monitor device status,e.g., the ready/busy (R/B #) signal on the R/B # signal line 442. As oneskilled in the art will appreciate, the “#” symbol indicates aparticular signal being active in a LOW logic state.

The CE # signal enables or disables one or more logical units, e.g., an8 Gb block of memory 404, when memory interface 416 is operating inasynchronous mode. The CLE signal is used to load a command from the bus426 (DQ[7:0]) into the command register 424. The ALE signal is used toload an address from the bus 426 (DQ[7:0]) into an address register 444.The WE # signal transfers commands, addresses, and serial data from amemory access device (e.g., processor, memory controller, controlcircuitry, host system, computer circuitry 202 shown in FIG. 2, etc.) tothe memory 404 when memory interface 416 is operating in asynchronousmode. The RE # signal transfers serial data from the memory 404 to thehost system, e.g., computer circuitry 202 shown in FIG. 2, when memoryinterface 416 is operating in asynchronous mode. The WP # signal enablesor disables memory 404 programming and erase operations when memoryinterface 416 is operating in asynchronous mode. The R/B # signal is anopen-drain, active low output that requires an external pull-upresistor.

When memory interface 416 is operating in synchronous mode, signalsto/from memory interface 416 include the CE # signal on the CE # signalline 430, the CLE signal on the CLE signal line 432, the ALE signal onthe ALE signal line 434, a clock (CLK) signal on the WE # signal line436, write/read (W/R #) signal on the RE # signal line 438, and the DQSsignal on the DQS signal line 428. The CLK signal latches command andaddress states when memory interface 416 is operating in synchronousmode. The W/R # signal controls the direction of the bus 426 (DQ[7:0]).

Address information from address register 444 is directed to a columndecode 450 and/or a row decode 452, which in turn, drives selection ofone or more memory cells of memory 404. Data I/O information is writtento/read from memory 404 through a cache register 454 and data register456. Control logic 420 loads status information into a status register458, which may be further communicated to I/O control 418.

FIG. 5 shows I/O pin assignments for a memory interface operating inasynchronous, and synchronous, modes respectively, in accordance withone or more embodiments of the present disclosure. The two memoryinterface modes support, for example, a legacy NAND memory inasynchronous mode and higher speed NAND in synchronous mode.

As one skilled in the art will appreciate, by redefining the signals ontwo existing pins, and enabling one new I/O pin for use in thesynchronous mode, the memory interface of the present disclosure resultsin a low-pin-count device with a backwards compatible pin-outarrangement from one memory density to another. This backwardscompatible pin-out arrangement, operable for both asynchronous andsynchronous modes, also allows for future upgrades from a lower densitymemory to higher density memory arrangements without significantredesign.

The pin assignments for one or more embodiments of a memory interface516A in the asynchronous mode includes control pins WP #540A, CE #530A,ALE 534A, CLE 532A, WE #536A, and RE #538A, an output pin R/B #542A, andthe I/O pins of the bus 526A (DQ[7:0]). The pin assignments for one ormore embodiments of a memory interface 516B in the synchronous modeinclude redefining the signals on the WE #536A and RE #538A pins as CLK(clock input) and W/R # signals respectively, and the I/O pin DQS isenabled. In synchronous mode, the signal on the W/R # pin 538B controlsthe bus 526B direction for DQ, e.g., DQ[7:0], and DQS. The signal on theDQS pin 528 is a data strobe, and is driven from the source of the data.Thus, for read operations from memory, the memory device drives the DQSsignal with the output data, e.g., DQ, and the bidirectional DQS signalis edge aligned with the data. For write operations to the memorydevice, the memory access device, e.g., host, drives the DQS signal withthe input data, and the DQS signal is center aligned with the data,e.g., with DQ.

As comparatively illustrated in FIG. 5, the WP # signal line 540A of thememory interface 516A in the asynchronous mode corresponds to the WP #signal line 540B of the memory interface 516B in the asynchronous mode.The CE # signal line 530A of the memory interface 516A in theasynchronous mode corresponds to the CE # signal line 530B of the memoryinterface 516B in the asynchronous mode. The ALE signal line 534A of thememory interface 516A in the asynchronous mode corresponds to the ALEsignal line 534B of the memory interface 516B in the asynchronous mode.The CLE signal line 532A of the memory interface 516A in theasynchronous mode corresponds to the CLE signal line 532B of the memoryinterface 516B in the asynchronous mode. The WE # signal line 536A ofthe memory interface 516A in the asynchronous mode corresponds to the CK(clock) signal line 536B of the memory interface 516B in theasynchronous mode. The RE # signal line 538A of the memory interface516A in the asynchronous mode corresponds to the W/R # signal line 538Bof the memory interface 516B in the asynchronous mode. The R/B # signalline 542A of the memory interface 516A in the asynchronous modecorresponds to the R/B # signal line 542B of the memory interface 516Bin the asynchronous mode. The bus (DQ[7:0]) signal line 526A of thememory interface 516A in the asynchronous mode corresponds to the bus(DQ[7:0]) signal line 526B of the memory interface 516B in theasynchronous mode.

Memory interface 516B in the synchronous mode also shows the additionalDQS signal line 528. To achieve even higher data rates in a synchronousmode, signals on optional pins CK # (complementary clock) signal line546 and DQS # (complementary DQS) signal line 548 can be implemented.Those skilled in the art will recognize that presence of complimentarytiming signals facilitates use of differential input buffers, and thusfaster signal state recognition.

FIGS. 6A-6D show timing waveforms for examples of switching a memoryinterface of the present disclosure between asynchronous and synchronousmodes using a Set Feature command set for writing data, and a GetFeature command set for reading data. The Set Feature command set showshow data is written to a memory device in both interface modes, e.g.,asynchronous and synchronous. The Get Feature command set shows how datais read from the memory device in both interface modes.

When the memory interface is activated in synchronous mode, high-speedSDR, and optionally DDR, I/O data transfers are capable. Certain signallines used for asynchronous data transfer are used to communicatedifferent signals for high-speed synchronous data transfer. For example,the WE # signal line is used to communicate a clock to provide a timingreference to the memory device, an additional signal line communicatinga bidirectional data strobe signal (DQS) is enabled, and a RE # signalline is used to communicate a W/R # signal. During memory device dataoutput, the DQS signal is driven by the memory device. During memorydevice data input, the DQS signal is controlled by a memory accessdevice while inputting data on the I/O bus, e.g., DQ[7:0].

The direction of the DQS signal line and I/O bus are controlled by theW/R # signal. The W/R # signal is unasserted, e.g., latched HIGH, whenthe host memory controller is driving the I/O bus and DQS signal line.The W/R # signal is asserted, e.g., latched LOW, when the memory deviceis driving the I/O bus and DQS signal line.

FIG. 6A illustrates the timing waveforms for an example of a Set Featurecommand set, issued to the data, e.g., memory, interface to perform awrite operation in an asynchronous mode, thereafter switching to asynchronous mode. FIG. 6B illustrates the timing waveforms of a GetFeature command set issued in the synchronous mode to perform a readoperation. FIG. 6C illustrates the timing waveforms for an example of aSet Feature command set issued to the data, e.g., memory, interface toperform a write operation in a synchronous mode, thereafter switching toan asynchronous mode. FIG. 6D illustrates the timing waveforms of a GetFeature command set issued in the asynchronous mode to perform a readoperation.

The Set Feature command set consists of communicating, on a multiplexedbus, an initial command, followed by address information, and then bythe data. In the asynchronous mode, the command, address information,and data are latched on the rising edge of the WE # signal, as shown inFIG. 6A. In the synchronous mode, the command, address information arelatched on the rising edge of the CLK, e.g., clock, signal, and the datais latched center aligned with the DQS, e.g., data strobe, signal, asshown in FIG. 6C.

The Get Feature command set consists of communicating, on themultiplexed bus, an initial command, followed by address information,and then by the read-out data. In the asynchronous mode, the command,address information, and the read data are output on the falling edge ofthe RE # signal, as shown in FIG. 6D. In the synchronous mode, thecommand, address information are latched on the rising edge of the CLK,e.g., clock, signal, and the data is output on the rising (andoptionally the falling) edges of the CLK (clock) signal, with ALE andCLE signals high and W/R # signal low.

Those having ordinary skill in the art will appreciate that programmableelements, e.g., fuses, metal options, antifuses, and floating gatetransistors, can also be used to select either the asynchronous orsynchronous mode for the interface on power-up, for example to remain inthe selected mode.

FIG. 6A shows timing waveforms associated with a memory interface inasynchronous mode, before switching to a synchronous mode, in accordancewith one or more embodiments of the present disclosure. Thecommunication between a memory device and a memory controller isasynchronous. Thus, the memory device is not driven by an externalclock. Rather, timing chains that are activated by the control signals,e.g., ALE and CLE, are used to control the timing of the data transfer.The memory controller uses control signals to indicate to the memorydevice, e.g., an array, when requests for data transactions are sent.The data transfers themselves are also performed asynchronously.

The Set Feature command set is used to write data to the memory device.Time t1 indicates the initial command cycle with the CLE signal being ina HIGH logic state corresponding to a rising edge of the WE # signal,with the Set Feature command, e.g., EFh, being communicated on the bus(e.g., DQ, shown as I/Ox in FIG. 6A). Time t2 indicates the addresscycle with the ALE signal being in a HIGH logic state corresponding to arising edge of the WE # signal with the address, e.g., 01h, on the busbeing latched. Time t3 indicates the data cycle with data, e.g., 10h, onthe bus, being latched on a rising edge of the WE # signal. The RE #,i.e., read enable, signal is in an unasserted, e.g., HIGH, logic stateduring the asynchronous write operation.

FIG. 6B shows timing waveforms associated with a memory interface in asynchronous mode, after switching from an asynchronous mode, inaccordance with one or more embodiments of the present disclosure. TheGet Feature command set is used to read data from the memory device.Time t4 indicates the initial command cycle in the synchronous mode withthe CLE signal being in a HIGH logic state corresponding to a risingedge of the CLK (clock) signal (present on the pin corresponding to theWE # signal in the asynchronous mode). The Get Feature command, e.g.,EEh, communicated on the bus (e.g., I/Ox) is latched during the initialcommand cycle.

Time t5 indicates the address cycle with the ALE signal being in a HIGHlogic state corresponding to a rising edge of the CLK (clock) signalwith the address, e.g., 01h, present on the bus, being latched duringthe address cycle. After some delay, and with CLE and ALE signals againin an asserted, e.g., HIGH, logic state, and the W/R # signal also in anasserted, e.g., LOW, logic state indicating a read operation, time t6begins the data cycle(s) with data being output and edge aligned withthe data strobe (DQS) signal. FIG. 6B shows that the CLE and ALE signalsare latched HIGH at four CLK signal rising edges, which corresponds tothe four data output cycles as shown at t6 to t9. The above-mentioneddelay may be, for example, 1½ clock cycles after the CLE and ALE signalsare asserted again, e.g., transition to a HIGH logic state, or may be apredefined access time regardless of clock period. The reader willappreciate that the bus, e.g., I/Ox, and data strobe (DQS) signals aredriven by the memory device for a read operation, and thus the delay isan internal delay.

FIG. 6C shows timing waveforms associated with a memory interface in asynchronous mode, before switching to an asynchronous mode, inaccordance with one or more embodiments of the present disclosure. TheSet Feature command set is used to write data to the memory device. Timet10 indicates the initial command cycle in a synchronous mode with theCLE signal being in a HIGH logic state corresponding to a rising edge ofthe CLK (clock) signal (present on the pin corresponding to the WE #signal of the asynchronous mode). The Set Feature command, e.g., EFh,communicated on the bus (e.g., I/Ox) is latched during the initialcommand cycle.

Time t11 signals the address cycle with the ALE signal being in anasserted, e.g., HIGH logic state corresponding to a rising edge of theCLK (clock) signal with the address, e.g., 01h, present on the bus,being latched during the address cycle. After some delay, and with CLEand ALE signals again in an asserted, e.g., HIGH, logic state, and theW/R # in an unasserted, e.g., HIGH, logic state indicating a writeoperation, time t12 begins the data cycle with data being latchedcorresponding to a center aligned assertion, e.g., a HIGH logic state,of the data strobe (DQS) signal with the data, e.g., 00h etc., beingclocked-in on the bus.

While the waveforms illustrated in FIG. 6B for the GET feature, and inFIG. 6C for the SET feature in the synchronous mode, are shown to beessentially for single data rate (SDR) operations, with the same data(e.g., I/Ox) present on both the rising and falling edges of the DQSsignal, embodiments of the present disclosure are not so limited. A dualdata rate (DDR) implementation may be supported by one or moreembodiments of the asynchronous/synchronous interface disclosed herein,having different data (input or output) on the rising and falling edgesof the DQS signal respectively. A DDR interface embodiment may beimplemented, for example, with memory array operations in synchronousmode, and utilizing, for example, complementary signals on the optionalCK # and DQS # pins, as shown in FIG. 5.

FIG. 6D shows timing waveforms associated with an asynchronous interfaceafter switching from a synchronous interface, in accordance with one ormore embodiments of the present disclosure. The Get Feature command setis used to read data from the memory device. Time t13 indicates theinitial command cycle with the CLE signal being in a HIGH logic statecorresponding to a rising edge of the WE # signal, with the Get Featurecommand, e.g., EEh, being communicated on the bus (e.g., DQ, shown asI/Ox in FIG. 6D). Time t14 indicates the address cycle with the ALEsignal being in a HIGH logic state with the address, e.g., 01h, on thebus being latched corresponding to a rising edge of the WE # signal.After some delay, time t15 indicates the beginning of the read datacycle(s), with data being latched on a falling edge of the RE # (readenable) signal with data, e.g., 00h, being present on the bus, e.g.,I/Ox. The WE # (write enable) signal is in an unasserted, e.g., HIGHlogic state, during the asynchronous read operation.

The signals indicated in FIGS. 6A-6D correspond to one method forimplementing embodiments of the present disclosure. It will beappreciated by those ordinarily skilled in the art that changes to theparticular signals provided to/from the memory interface, as shown inFIG. 6A-6D, will not depart from the scope of the present invention.

FIG. 7 is a circuit diagram of a memory interface circuit, in accordancewith one or more embodiments of the present disclosure. Logic of thememory interface circuit consists of an input and output buffer portion,an input register portion, a command decoder portion, and an outputenable logic portion. According to one or more embodiments, a SYNCsignal is used to select an interface mode. According to one or moreembodiments, the interface mode is determined from whether or not aclock signal is detected, as will be described in greater detail below.

The ALE signal line 734 is connected to input buffer 760. The output ofbuffer 760 is connected to the input (D) of clocked D flip-flop 762,e.g., latch 762. The non-inverted output (Q) of latch 762, indicatingthe latched ALE signal ale_1 is coupled as a first input 763 to commanddecoder 764. The CLE signal line 732 is connected to input buffer 766.The output of buffer 766 is connected to the input (D) of clocked Dflip-flop 768, e.g., latch 768. The non-inverted output (Q) of latch768, indicating the latched CLE signal de_1 is coupled as a second input769 to command decoder 764. The WE # signal line 736 is connected toinput buffer 770. The output of buffer 770 is not latched, having signalwe_clk, and is coupled as a third input 771 to command decoder 764.

The RE # signal line 738 is connected to input buffer 772. The output ofbuffer 772 is connected to the input (D) of clocked D flip-flop 774,e.g., latch 774. The non-inverted output (Q) of latch 774, indicatingthe latched input signal, e.g., wr_1, is coupled as a fourth input 775to command decoder 764. The (unlatched) we_clk signal line 771, from theoutput of buffer 770, is connected as a clock input to latches 762, 768,774, as well as latch 779 (discussed below).

As one skilled in the art will appreciate, command decoder 764 isprogrammed to decode the signals on its inputs, to determine the logicalstate on each of two output signal lines, command clock (cmdclk) signalline 778, and address clock (adrclk) signal line 780. Command clock(cmdclk) signal line 778 is connected to the clock input of commandlatch 782, and address clock (adrclk) signal line 780 is connected tothe clock input of address latch 784.

The bus I/O signal lines 726, e.g., [7:0], are connected to input buffer771, an N-bit, e.g., 8-bit, wide buffer. The output of buffer 771 isconnected in parallel to the corresponding bit input (D) of three N-bit,e.g., 8-bit, clocked D flip-flops, e.g., latch 779, latch 781 and latch783. The non-inverted output (Q) of latch 779, indicating the latchedN-bit, e.g., 8-bit, command/address/data signal information is connectedas a first input to multiplexer 785 and as an input to both an N-bit,e.g., 8-bit, clocked D command flip-flop, e.g., command latch 782, andan N-bit, e.g., 8-bit, clocked D address flip-flop, e.g., address latch784. The output of command latch 782 is an N-bit, e.g., 8-bit, commandsignal line 786, and the output of address latch 784 is an N-bit, e.g.,8-bit, address signal line 788. The output of latch 781 is connected asa second input to multiplexer 785. The output of multiplexer 785 is thedata_r signal line 790.

Latch 783 is clocked by an inverted data strobe signal, the output ofinput buffer 761 being connected (inverted) to the clock input of latch783. The output of latch 783 is the data_f [7:0] signal line 791.

The memory interface mode selection signal SYNC is connected to thecommand decoder 764 as a fifth input 776. This control signal (SYNC) isactive when in a HIGH logic state, and defines which memory interfacemode is selected, according to one or more embodiments of the presentdisclosure. In addition to being an input to the command decoder 764,the SYNC signal line 776 is also connected to multiplexer 785, and theoutput enable logic 787 to configure these logic elements for theselected memory interface mode.

When the asynchronous mode is selected, multiplexer 785 selects the datainput register clocked by the WE # signal, e.g., latch 779. The commanddecoder 764 will ignore the signal on the wr_1 input 775 (derived fromthe RE # signal line 738). The output enable logic 787 will produce anoutput enable signal (oe_) triggered from the falling edge of the signalderived from the RE # signal line 738, e.g., the re_wr signal 765 on theoutput of the input buffer 772.

The outputs of latch 762 (ale_1), latch 768 (de_1), latch 774 (wr_1),and buffer 770 (we_clk) are all connected as inputs to the output enablelogic 787. The output of output enable logic 787, shown as indicatingthe oe_signal, is connected as a control input to I/O output buffer 773and data strobe (DQS) output buffer 767. The input to I/O output buffer773 is the dout [7:0] N-bit, e.g., 8-bit, signal line 789. The input toDQS output buffer 767 is the dqs_clk signal line 792.

When the synchronous mode is selected, e.g., by the state of the signalon the SYNC signal line 776, multiplexer 785 will select the data inputregister clocked by the DQS, e.g., from latch 781. The command decoder764 will utilize the signal on the wr_1 input 775 in its logic (derivedfrom W/R # input signal line 738 in synchronous mode—corresponding tothe RE # signal line 738 in asynchronous mode).

The output enable logic 787 will utilize the signals derived from theALE, CLE, W/R #, and CLK input signal lines (e.g., ale_1 763, de_1 769,wr_1 775, and we_clk 771 signal lines respectively. As the reader willappreciate, the output enable logic controls the direction of the I/O(data) and DQS (data strobe) signals by enabling the correspondingoutput buffers, e.g., 773 and 767, the respective outputs beingconnected to I/O line 726 and DQS signal line 728 respectively.

The dual, e.g., asynchronous/synchronous, interface system has beendeveloped to provide, for example, a backwards-compatible asynchronousinterface to legacy memory devices, as well as to provide a synchronousinterface for higher-speed synchronous memory devices. When operating insynchronous mode, the dual interface is driven from the source of thedata, e.g., DQS is driven from the data source. Thus, the bidirectionalI/O DQS pin 728 is added to the interface for this purpose. For readsfrom memory, e.g., NAND Flash memory, the memory device drives the DQSsignal on the DQS pin 728 with the output data. DQS is edge aligned withthe data. For writes to memory, e.g., NAND Flash memory, a host drivesthe DQS signal on the DQS pin 728 with the input data, and the DQSsignal is center aligned with the data.

According to one or more embodiments, the dual interface defaults to beinitially configured, e.g., powered-up, in the asynchronous mode so asto be backwards-compatible with legacy, e.g., asynchronous, memorydevices. However, the mode of the interface may be changed, for exampleusing the Set Feature command, by detection of a clock signal, or byhard programming such as fuse or metal options. When the interface ischanged from asynchronous mode, to the synchronous mode, the signal onthe Write Enable (WE #) signal line is redefined as communicating aclock (CLK) signal, thus in the synchronous mode the WE # signal linebecomes a CLK signal line. Also, the signal on the Read Enable (RE #)signal line is redefined as communicating a Write/Read (W/R #) signal,thus in the synchronous mode the RE # signal line becomes a W/R # signalline.

In addition, the DQS signal line is enabled. When the interface ischanged from a synchronous mode, to the asynchronous mode, the signal onthe clock (CLK) signal line is redefined as communicating a Write Enable(WE #) signal, thus in the asynchronous mode the CLK signal line becomesWE # signal line. Also, the signal on the Write/Read (W/R #) signal lineis redefined as communicating a Read Enable (RE #) signal, thus in theasynchronous mode the W/R # signal line becomes a RE # signal line. TheDQS signal is also not used, e.g., disabled, in the asynchronous mode.

As one skilled in the art will appreciate, in accordance with one ormore of the presently disclosed embodiments, only one new contact, e.g.,for the data strobe (DQS) signal, needs to be added to the interface tosupport the synchronous mode in addition to the contacts used to supportthe asynchronous mode (excluding the additional signal lines foroptional complementary signals associated with DDR communications).Thus, memory devices, e.g., NAND devices, utilizing the memoryinterface, according to embodiments of the present disclosure, can beplugged into sockets of existing technologies, e.g., dedicatedasynchronous communications, to take advantage of the backwardcompatibility features, and plugged into sockets of synchronous-capablesystems to take advantage of the faster performance features.

As described above, either an asynchronous mode or a synchronous mode isselected by the circuit illustrated in FIG. 7 based on the status of aSYNC signal, e.g., logic state present on the SYNC signal line 776. TheSYNC signal line 776 may be coupled to a register, for example, suchthat the SYNC signal represents the logic status of a bit in commandregister 424 shown in FIG. 4. However, embodiments of the presentdisclosure are not so limited to such a “master signal” configurationfor selecting the mode of the interface to be either asynchronous orsynchronous.

According to one or more embodiments of the present disclosure,selection of the asynchronous mode, or synchronous mode, may be made bya clock signal auto-detection circuit. As will be appreciated by oneskilled in the art, a free-running clock signal changes between logicstates according to a time period. A clock signal is used to coordinatesynchronous communications between a source and destination; however,asynchronous communications occur without correspondence to a clocksignal. The clock auto-detection circuit is configured to sense thepresence or absence of a free-running clock signal, e.g., on the WE#/Clk signal line 736. Thus, the detection of a free-running, e.g.,continuous, periodic clock signal on the WE #/Clk signal line 736, canbe used to determine that the memory interface may operate in asynchronous mode.

Thus, a clock auto-detection circuit may be configured to monitor the WE#/Clk signal line 736, e.g., when the chip to be monitored is enabled,for the presence (or absence) of a periodic signal, corresponding to apredetermined clock frequency, existing for a particular amount of time,or number of clock cycles. The clock auto-detection circuit can, forexample, generate the SYNC output corresponding to selecting thesynchronous mode when clock signal detection criteria are satisfied, andotherwise generating the SYNC output corresponding to selecting theasynchronous mode, e.g., when clock signal detection criteria are notsatisfied. Clock signal detection criteria may include, for example, aclock signal being present for a certain number of cycles, or for acertain period of time.

According to one or more embodiments, the memory interface has a firstmode in which data transfer circuits of a memory device are not drivenby an internal clock signal. The memory interface also has a second modein which data transfer circuits of a memory device are driven by aninternal clock signal. For example, a memory interface powers-up in adefault asynchronous mode. If no free-running clock signal is detectedon the WE #/Clk signal line 736, the SYNC signal is set to one statecorresponding to the memory interface continuing to operate in thedefault asynchronous mode. However, if a free-running clock signal isdetected on the WE #/Clk signal line 736, the SYNC signal is then set toanother state corresponding to the memory interface switching to operatein a synchronous mode.

According to one or more embodiments, detection for a free-running clocksignal occurs once the chip is enabled, e.g., the CE # signal goes to anactive state. According to one or more embodiments, the memory interfacedefaults to operate in a synchronous mode, with detection for absence ofa free-running clock signal causing the memory interface to switch to anasynchronous mode.

FIG. 8 is a circuit diagram of a memory interface circuit, in accordancewith one or more embodiments of the present disclosure. FIG. 8 is afunctional block diagram of a memory module having at least one memorydevice operated in accordance with one or more embodiments of thepresent disclosure. Memory module 893 is illustrated as a memory card,although the concepts discussed with reference to memory module 893 areapplicable to other types of removable or portable memory (e.g., USBflash drives) and are intended to be within the scope of “memory module”as used herein. In addition, although one example form factor isdepicted in FIG. 8, these concepts are applicable to other form factorsas well.

In one or more embodiments, memory module 893 will include a housing 894(as depicted) to enclose one or more memory devices 895, though such ahousing is not essential to all devices or device applications. At leastone memory device 895 includes an array of non-volatile multilevelmemory cells that can be sensed according to embodiments describedherein. Where present, the housing 894 includes one or more contacts 896for communication with a host device. Examples of host devices includedigital cameras, digital recording and playback devices, PDAs, personalcomputers, memory card readers, interface hubs and the like. For one ormore embodiments, the contacts 896 are in the form of a standardizedinterface. For example, with a USB flash drive, the contacts 896 mightbe in the form of a USB Type-A male connector. For one or moreembodiments, the contacts 896 are in the form of a semi-proprietaryinterface, such as might be found on CompactFlash™ memory cards licensedby SanDisk Corporation, Memory Stick™ memory cards licensed by SonyCorporation, SD Secure Digital™ memory cards licensed by ToshibaCorporation and the like. In general, however, contacts 896 provide aninterface for passing control, address and/or data signals between thememory module 893 and a host having compatible receptors for thecontacts 896.

The memory module 893 may optionally include additional circuitry 897,which may be one or more integrated circuits and/or discrete components.For one or more embodiments, the additional circuitry 897 may includecontrol circuitry, such as a memory controller, for controlling accessacross multiple memory devices 895 and/or for providing a translationlayer between an external host and a memory device 895. For example,there may not be a one-to-one correspondence between the number ofcontacts 896 and a number of 895 connections to the one or more memorydevices 895. Thus, a memory controller could selectively couple an I/Oconnection (not shown in FIG. 8) of a memory device 895 to receive theappropriate signal at the appropriate I/O connection at the appropriatetime or to provide the appropriate signal at the appropriate contact 896at the appropriate time. Similarly, the communication protocol between ahost and the memory module 893 may be different than what is requiredfor access of a memory device 895. A memory controller could thentranslate the command sequences received from a host into theappropriate command sequences to achieve the desired access to thememory device 895. Such translation may further include changes insignal voltage levels in addition to command sequences.

The additional circuitry 897 may further include functionality unrelatedto control of a memory device 895 such as logic functions as might beperformed by an ASIC. Also, the additional circuitry 897 may includecircuitry to restrict read or write access to the memory module 893,such as password protection, biometrics or the like. The additionalcircuitry 897 may include circuitry to indicate a status of the memorymodule 893. For example, the additional circuitry 897 may includefunctionality to determine whether power is being supplied to the memorymodule 893 and whether the memory module 893 is currently beingaccessed, and to display an indication of its status, such as a solidlight while powered and a flashing light while being accessed. Theadditional circuitry 897 may further include passive devices, such asdecoupling capacitors to help regulate power requirements within thememory module 893.

CONCLUSION

The present disclosure includes methods, and circuits, for operating amemory device. One method embodiment includes controlling data transferthrough a memory interface in an asynchronous mode by writing data tothe memory device at least partially in response to a write enablesignal on a first interface contact, and reading data from the memorydevice at least partially in response to a read enable signal on asecond interface contact. The method further includes controlling datatransfer in a synchronous mode by transferring data at least partiallyin response to a clock signal on the first interface contact, andproviding a bidirectional data strobe signal on an interface contact notutilized in the asynchronous mode.

Although specific embodiments have been illustrated and describedherein, those of ordinary skill in the art will appreciate that anarrangement calculated to achieve the same results can be substitutedfor the specific embodiments shown. This disclosure is intended to coveradaptations or variations of one or more embodiments of the presentdisclosure. It is to be understood that the above description has beenmade in an illustrative fashion, and not a restrictive one. Combinationof the above embodiments, and other embodiments not specificallydescribed herein will be apparent to those of skill in the art uponreviewing the above description. The scope of the one or moreembodiments of the present disclosure includes other applications inwhich the above structures and methods are used. Therefore, the scope ofone or more embodiments of the present disclosure should be determinedwith reference to the appended claims, along with the full range ofequivalents to which such claims are entitled.

In the foregoing Detailed Description, some features are groupedtogether in a single embodiment for the purpose of streamlining thedisclosure. This method of disclosure is not to be interpreted asreflecting an intention that the disclosed embodiments of the presentdisclosure have to use more features than are expressly recited in eachclaim. Rather, as the following claims reflect, inventive subject matterlies in less than all features of a single disclosed embodiment. Thus,the following claims are hereby incorporated into the DetailedDescription, with each claim standing on its own as a separateembodiment.

1-20. (canceled)
 21. An apparatus, comprising: a memory interfaceconfigured to: receive, on a first edge of a signal, a first commandcorresponding to performance of a memory operation performed using thememory interface while the memory interface is operating in asynchronous mode; switch from the synchronous mode to an asynchronousmode; and receive, on a second edge of the signal, a second commandcorresponding to performance of a memory operation performed using thememory interface while the memory interface is operating in theasynchronous mode.
 22. The apparatus of claim 21, wherein the first edgeis a rising edge of the signal and wherein the second edge is a fallingedge of the signal.
 23. The apparatus of claim 21, wherein the signal isan address latch enable signal, a command latch enable signal, or both.24. The apparatus of claim 21, wherein the memory interface is furtherconfigured to receive, on the first edge of the signal, addressinformation, data, or both.
 25. The apparatus of claim 21, wherein thememory interface is configured to latch data in the synchronous modesuch that the data is center aligned with a data strobe signal receivedby the memory interface.
 26. The apparatus of claim 21, wherein thememory interface is configured to, as part of performance of the memoryoperation in the synchronous mode, output data on a rising edge of thesignal, a falling edge of the signal, or both.
 27. The apparatus ofclaim 21, wherein the memory interface is configured to operate in thesynchronous mode utilizing one additional contact of the memoryinterface than a quantity of contacts utilized in the asynchronous mode.28. An apparatus, comprising: a memory interface configured to: receive,on a first edge of a signal, a first command corresponding toperformance of a memory operation performed using the memory interfacewhile the memory interface is operating in an asynchronous mode; switchfrom the asynchronous mode to a synchronous mode; and receive, on asecond edge of the signal, a second command corresponding to performanceof a memory operation performed using the memory interface while thememory interface is operating in the synchronous mode.
 29. The apparatusof claim 28, wherein the first edge is a falling edge of the signal andwherein the second edge is a rising edge of the signal.
 30. Theapparatus of claim 28, wherein the signal is an address latch enablesignal, a command latch enable signal, or both.
 31. The apparatus ofclaim 28, wherein the memory interface is further configured to output,on the first edge of the signal, address information, data, or both. 32.The apparatus of claim 28, wherein the memory interface is configured tolatch data in the synchronous mode such that the data is center alignedwith a data strobe signal received by the memory interface.
 33. Theapparatus of claim 28, wherein the memory interface is configured to, aspart of performance of the memory operation in the synchronous mode,output data on a rising edge of the signal, a falling edge of thesignal, or both.
 34. The apparatus of claim 28, wherein the memoryinterface is configured to operate in the asynchronous mode utilizingone fewer contact of the memory interface than a quantity of contactsutilized in the synchronous mode.
 35. A method, comprising: receiving,by a memory interface and on a first edge of a signal, a first commandcorresponding to performance of a memory operation performed using thememory interface while the memory interface is operating in asynchronous mode or an asynchronous mode; switching from the synchronousmode or the asynchronous mode to the other of the synchronous mode orthe asynchronous mode; and receiving, via a memory interface and on asecond edge of the signal, a second command corresponding to performanceof a memory operation performed using the memory interface while thememory interface is operating in the other of the synchronous mode orthe asynchronous mode.
 36. The method of claim 35, further comprisingoperating the memory interface in the asynchronous mode utilizing onefewer contact of the memory interface than a quantity of contactsutilized in the synchronous mode.
 37. The method of claim 35, furthercomprising latching, be the memory interface, data in the synchronousmode such that the data is center aligned with a data strobe signalreceived by the memory interface.
 38. The method of claim 35, whereinthe first edge is a rising edge or a falling edge of the signal andwherein the second edge is the other of the rising edge or the fallingedge of the signal.
 39. The method of claim 35, wherein the signal is anaddress latch enable signal, a command latch enable signal, or both. 40.The method of claim 35, further comprising outputting, by the memoryinterface and on the first edge of the signal, the second edge of thesignal, or both, address information, data, or both while at least oneof an address latch enable signal or a command latch enable signal ishigh.